FDB110N15A MOSFET Transistor

The FDB110N15A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB110N15A transistor as follows.

FDB110N15A Transistor Specification

Transistor Code		FDB110N15A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263_D2PAK
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	65A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.011Ohm
Power Dissipation (Maximum)	PD	234W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		47nC

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