FDB082N15A MOSFET Transistor

The FDB082N15A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB082N15A transistor as follows.

FDB082N15A Transistor Specification

Transistor Code		FDB082N15A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263_D2PAK
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0082Ohm
Power Dissipation (Maximum)	PD	294W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		64.5nC

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