FDB029N06 MOSFET Transistor

The FDB029N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB029N06 transistor as follows.

FDB029N06 Transistor Specification

Transistor Code		FDB029N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263_D2PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	193A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0031Ohm
Power Dissipation (Maximum)	PD	231W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		116nC

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