FDB024N06 MOSFET Transistor

The FDB024N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB024N06 transistor as follows.

FDB024N06 Transistor Specification

Transistor Code		FDB024N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263_D2PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	265A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0024Ohm
Power Dissipation (Maximum)	PD	395W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		174nC

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