FDB016N04AL7 MOSFET Transistor

The FDB016N04AL7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB016N04AL7 transistor as follows.

FDB016N04AL7 Transistor Specification

Transistor Code		FDB016N04AL7
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263_D2PAK
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	160A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0016Ohm
Power Dissipation (Maximum)	PD	283W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		129nC

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