FDAF69N25 MOSFET Transistor

The FDAF69N25 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDAF69N25 transistor as follows.

FDAF69N25 Transistor Specification

Transistor Code		FDAF69N25
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3PF
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	34A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.041Ohm
Power Dissipation (Maximum)	PD	115W
Drain-Source Capacitance		750pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		855nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		100nC

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