FDAF62N28 MOSFET Transistor

The FDAF62N28 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDAF62N28 transistor as follows.

FDAF62N28 Transistor Specification

Transistor Code		FDAF62N28
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3PF
Drain-Source Voltage (Maximum)	VDS	280V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	36A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.051Ohm
Power Dissipation (Maximum)	PD	165W
Drain-Source Capacitance		730pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		560nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		100nC

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