FDAF59N30 MOSFET Transistor

The FDAF59N30 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDAF59N30 transistor as follows.

FDAF59N30 Transistor Specification

Transistor Code		FDAF59N30
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3PF
Drain-Source Voltage (Maximum)	VDS	300V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	34A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.056Ohm
Power Dissipation (Maximum)	PD	161W
Drain-Source Capacitance		710pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		575nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		100nC

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