FDA59N25 MOSFET Transistor

The FDA59N25 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDA59N25 transistor as follows.

FDA59N25 Transistor Specification

Transistor Code		FDA59N25
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3PN
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	59A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.049Ohm
Power Dissipation (Maximum)	PD	392W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		63nC

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