FDA38N30 MOSFET Transistor

The FDA38N30 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDA38N30 transistor as follows.

FDA38N30 Transistor Specification

Transistor Code		FDA38N30
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3PN
Drain-Source Voltage (Maximum)	VDS	300V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	38A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.085Ohm
Power Dissipation (Maximum)	PD	312W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		60nC

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