FDA16N50_F109 MOSFET Transistor

The FDA16N50_F109 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDA16N50_F109 transistor as follows.

FDA16N50_F109 Transistor Specification

Transistor Code		FDA16N50_F109
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3PN
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	16.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.38Ohm
Power Dissipation (Maximum)	PD	205W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		32nC

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