FDA16N50 MOSFET Transistor

The FDA16N50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDA16N50 transistor as follows.

FDA16N50 Transistor Specification

Transistor Code		FDA16N50
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3PN
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	16.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.38Ohm
Power Dissipation (Maximum)	PD	205W
Drain-Source Capacitance		235pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		150nS
Gate-Threshold Voltage (Maximum)		5V

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