FDA032N08 MOSFET Transistor

The FDA032N08 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDA032N08 transistor as follows.

FDA032N08 Transistor Specification

Transistor Code		FDA032N08
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3PN
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	235A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0032Ohm
Power Dissipation (Maximum)	PD	375W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		169nC

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