FCU7N60TU MOSFET Transistor

The FCU7N60TU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FCU7N60TU transistor as follows.

FCU7N60TU Transistor Specification

Transistor Code		FCU7N60TU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I-PAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.6Ohm
Power Dissipation (Maximum)	PD	83W
Drain-Source Capacitance		380pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		55nS
Gate-Threshold Voltage (Maximum)		5V

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