FCU3400N80Z MOSFET Transistor

The FCU3400N80Z is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FCU3400N80Z transistor as follows.

FCU3400N80Z Transistor Specification

Transistor Code		FCU3400N80Z
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I-PAK
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.4Ohm
Power Dissipation (Maximum)	PD	32W
Drain-Source Capacitance		12.7pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6.4nS
Gate-Threshold Voltage (Maximum)		4.5V

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