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FCPF150N65FL1 MOSFET Transistor

The FCPF150N65FL1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FCPF150N65FL1 transistor as follows.

Circuit diagram symbol of the FCPF150N65FL1 transistor

FCPF150N65FL1 Transistor Specification

Transistor Code FCPF150N65FL1
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 24A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.15Ohm
Power Dissipation (Maximum) PD 39W
Drain-Source Capacitance 91pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS
Gate-Threshold Voltage (Maximum) 5V

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