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FCPF11N60NT MOSFET Transistor

The FCPF11N60NT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FCPF11N60NT transistor as follows.

Circuit diagram symbol of the FCPF11N60NT transistor

FCPF11N60NT Transistor Specification

Transistor Code FCPF11N60NT
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220F
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 10.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.299Ohm
Power Dissipation (Maximum) PD 32.1W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 27.4nC

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