FCP260N60E MOSFET Transistor

The FCP260N60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FCP260N60E transistor as follows.

FCP260N60E Transistor Specification

Transistor Code		FCP260N60E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.26Ohm
Power Dissipation (Maximum)	PD	156W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		48nC

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