FCP20N60 MOSFET Transistor

The FCP20N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FCP20N60 transistor as follows.

FCP20N60 Transistor Specification

Transistor Code		FCP20N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	208W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		98nC

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