FCP190N60E MOSFET Transistor

The FCP190N60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FCP190N60E transistor as follows.

FCP190N60E Transistor Specification

Transistor Code		FCP190N60E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	208W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		63nC

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