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FCP11N60N MOSFET Transistor

The FCP11N60N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FCP11N60N transistor as follows.

Circuit diagram symbol of the FCP11N60N transistor

FCP11N60N Transistor Specification

Transistor Code FCP11N60N
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 10.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.299Ohm
Power Dissipation (Maximum) PD 94W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 27.4nC

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