FCH35N60 MOSFET Transistor

The FCH35N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FCH35N60 transistor as follows.

FCH35N60 Transistor Specification

Transistor Code		FCH35N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247_TO3P_TO3PF
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.098Ohm
Power Dissipation (Maximum)	PD	312.5W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		139nC

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