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FCH190N65F_F085 MOSFET Transistor

The FCH190N65F_F085 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FCH190N65F_F085 transistor as follows.

Circuit diagram symbol of the FCH190N65F_F085 transistor

FCH190N65F_F085 Transistor Specification

Transistor Code FCH190N65F_F085
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 20.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.401Ohm
Power Dissipation (Maximum) PD 208W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 63nC

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