FCH041N60E MOSFET Transistor

The FCH041N60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FCH041N60E transistor as follows.

FCH041N60E Transistor Specification

Transistor Code		FCH041N60E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	77A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.041Ohm
Power Dissipation (Maximum)	PD	592W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		285nC

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