FCD7N60 MOSFET Transistor

The FCD7N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FCD7N60 transistor as follows.

FCD7N60 Transistor Specification

Transistor Code		FCD7N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252_DPAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.6Ohm
Power Dissipation (Maximum)	PD	83W
Total Gate Charge		23nC

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