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FCD5N60TM_WS MOSFET Transistor

The FCD5N60TM_WS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FCD5N60TM_WS transistor as follows.

Circuit diagram symbol of the FCD5N60TM_WS transistor

FCD5N60TM_WS Transistor Specification

Transistor Code FCD5N60TM_WS
Transistor Type MOSFET
Control Channel Type N-Channel
Package D-PAK
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.95Ohm
Power Dissipation (Maximum) PD 54W
Drain-Source Capacitance 250pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 40nS
Gate-Threshold Voltage (Maximum) 5V

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