The FCD5N60TM_WS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the FCD5N60TM_WS transistor as follows.
Transistor Code | FCD5N60TM_WS | |
---|---|---|
Transistor Type | MOSFET | |
Control Channel Type | N-Channel | |
Package | D-PAK | |
Drain-Source Voltage (Maximum) | VDS | 600V |
Gate-Source Voltage (Maximum) | VGS | 30V |
Drain Current (Maximum) | ID | 4.6A |
Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.95Ohm |
Power Dissipation (Maximum) | PD | 54W |
Drain-Source Capacitance | 250pF | |
Operating Junction Temperature (Maximum) | 150°C | |
Rise Time | 40nS | |
Gate-Threshold Voltage (Maximum) | 5V |
UXPython is not the creator or an official representative of the FCD5N60TM_WS MOSFET transistor. You can download the official FCD5N60TM_WS MOSFET transistor datasheet to get more infromation about this transistor.
Note : Copyrighted materials belong to their creator or official representative.