FCD5N60TM_WS MOSFET Transistor

The FCD5N60TM_WS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FCD5N60TM_WS transistor as follows.

FCD5N60TM_WS Transistor Specification

Transistor Code		FCD5N60TM_WS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D-PAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.95Ohm
Power Dissipation (Maximum)	PD	54W
Drain-Source Capacitance		250pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		5V

UXPython is not the creator or an official representative of the FCD5N60TM_WS MOSFET transistor. You can download the official FCD5N60TM_WS MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FDD6N20TF MOSFET Transistor FDD6N50TF MOSFET Transistor FQD630TF MOSFET Transistor HFD6N70U MOSFET Transistor FQD24N08TF MOSFET Transistor HFD1N65S MOSFET Transistor FQD12P10TM MOSFET Transistor FQD11P06TM MOSFET Transistor FQD5P20TF MOSFET Transistor FQD17P06TF MOSFET Transistor FQD7P06TF MOSFET Transistor FQD19N10TM MOSFET Transistor HFD2N65U MOSFET Transistor FQD3N50CTF MOSFET Transistor FQD4N20LTM MOSFET Transistor SSR1N60BTM MOSFET Transistor FDD6N50TM MOSFET Transistor HFD2N60U MOSFET Transistor HFD5N70S MOSFET Transistor FQD3P50TF MOSFET Transistor