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FCD3400N80Z MOSFET Transistor

The FCD3400N80Z is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FCD3400N80Z transistor as follows.

Circuit diagram symbol of the FCD3400N80Z transistor

FCD3400N80Z Transistor Specification

Transistor Code FCD3400N80Z
Transistor Type MOSFET
Control Channel Type N-Channel
Package D-PAK
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 3.4Ohm
Power Dissipation (Maximum) PD 32W
Drain-Source Capacitance 12.7pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 6.4nS
Gate-Threshold Voltage (Maximum) 4.5V

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