FCD2250N80Z MOSFET Transistor

The FCD2250N80Z is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FCD2250N80Z transistor as follows.

FCD2250N80Z Transistor Specification

Transistor Code		FCD2250N80Z
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D-PAK
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.25Ohm
Power Dissipation (Maximum)	PD	39W
Drain-Source Capacitance		16pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6.7nS
Gate-Threshold Voltage (Maximum)		4.5V

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