FCB11N60TM MOSFET Transistor

The FCB11N60TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FCB11N60TM transistor as follows.

FCB11N60TM Transistor Specification

Transistor Code		FCB11N60TM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.38Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		671pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		98nS
Gate-Threshold Voltage (Maximum)		5V

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