EMH2801 MOSFET Transistor

The EMH2801 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the EMH2801 transistor as follows.

EMH2801 Transistor Specification

Transistor Code		EMH2801
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		EMH8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.065Ohm
Power Dissipation (Maximum)	PD	1W
Operating Junction Temperature (Maximum)		150°C

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