ECH8675 MOSFET Transistor

The ECH8675 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ECH8675 transistor as follows.

ECH8675 Transistor Specification

Transistor Code		ECH8675
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		ECH8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.046Ohm
Power Dissipation (Maximum)	PD	1.3W

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