ECH8668 MOSFET Transistor

The ECH8668 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ECH8668 transistor as follows.

ECH8668 Transistor Specification

Transistor Code		ECH8668
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		ECH8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	7.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.013Ohm
Power Dissipation (Maximum)	PD	1.3W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		10.8nC

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