ECH8667 MOSFET Transistor

The ECH8667 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ECH8667 transistor as follows.

ECH8667 Transistor Specification

Transistor Code		ECH8667
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		ECH8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	1.3W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		13nC

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