ECH8659 MOSFET Transistor

The ECH8659 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ECH8659 transistor as follows.

ECH8659 Transistor Specification

Transistor Code		ECH8659
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ECH8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	1.3W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		11.8nC

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