ECH8651R MOSFET Transistor

The ECH8651R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ECH8651R transistor as follows.

ECH8651R Transistor Specification

Transistor Code		ECH8651R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ECH8
Drain-Source Voltage (Maximum)	VDS	24V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0105Ohm
Power Dissipation (Maximum)	PD	1.4W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		24nC

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