ECH8602M MOSFET Transistor

The ECH8602M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ECH8602M transistor as follows.

ECH8602M Transistor Specification

Transistor Code		ECH8602M
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ECH8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	1.4W
Operating Junction Temperature (Maximum)		150°C

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