ECH8310 MOSFET Transistor

The ECH8310 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ECH8310 transistor as follows.

ECH8310 Transistor Specification

Transistor Code		ECH8310
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		ECH8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.013Ohm
Power Dissipation (Maximum)	PD	1.5W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		28nC

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