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ECH8308 MOSFET Transistor

The ECH8308 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ECH8308 transistor as follows.

Circuit diagram symbol of the ECH8308 transistor

ECH8308 Transistor Specification

Transistor Code ECH8308
Transistor Type MOSFET
Control Channel Type P-Channel
Package ECH8
Drain-Source Voltage (Maximum) VDS 12V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0092Ohm
Power Dissipation (Maximum) PD 1.6W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 26nC

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