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DMS2120LFWB MOSFET Transistor

The DMS2120LFWB is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the DMS2120LFWB transistor as follows.

Circuit diagram symbol of the DMS2120LFWB transistor

DMS2120LFWB Transistor Specification

Transistor Code DMS2120LFWB
Transistor Type MOSFET
Control Channel Type P-Channel
Package WDFN30208
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 3.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.095Ohm
Power Dissipation (Maximum) PD 1.5W
Drain-Source Capacitance 627pF
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 1.3V

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