DMN6066SSD MOSFET Transistor

The DMN6066SSD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the DMN6066SSD transistor as follows.

DMN6066SSD Transistor Specification

Transistor Code		DMN6066SSD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.097Ohm
Power Dissipation (Maximum)	PD	2.1W
Drain-Source Capacitance		502pF
Total Gate Charge		10.3nC

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