DMN3112S MOSFET Transistor

The DMN3112S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the DMN3112S transistor as follows.

DMN3112S Transistor Specification

Transistor Code		DMN3112S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT23
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.112Ohm
Power Dissipation (Maximum)	PD	1.4W
Drain-Source Capacitance		268pF

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