DMN3110S MOSFET Transistor

The DMN3110S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the DMN3110S transistor as follows.

DMN3110S Transistor Specification

Transistor Code		DMN3110S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT23
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.073Ohm
Power Dissipation (Maximum)	PD	0.74W
Drain-Source Capacitance		39.9pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4.6nS

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