DMN100 MOSFET Transistor

The DMN100 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the DMN100 transistor as follows.

DMN100 Transistor Specification

Transistor Code		DMN100
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC59
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.24Ohm
Power Dissipation (Maximum)	PD	0.5W
Drain-Source Capacitance		150pF

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