DMG6402LDM MOSFET Transistor

The DMG6402LDM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the DMG6402LDM transistor as follows.

DMG6402LDM Transistor Specification

Transistor Code		DMG6402LDM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT26
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.042Ohm
Power Dissipation (Maximum)	PD	1.1W
Drain-Source Capacitance		386pF

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