The DMG5802LFX is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the DMG5802LFX transistor as follows.
| Transistor Code | DMG5802LFX | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | N-Channel | |
| Package | WDFN50206 | |
| Drain-Source Voltage (Maximum) | VDS | 24V |
| Gate-Source Voltage (Maximum) | VGS | 12V |
| Drain Current (Maximum) | ID | 6.5A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.015Ohm |
| Power Dissipation (Maximum) | PD | 0.98W |
| Drain-Source Capacitance | 1066.4pF | |
| Total Gate Charge | 14.5nC | |
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