DMG4800LSD MOSFET Transistor

The DMG4800LSD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the DMG4800LSD transistor as follows.

DMG4800LSD Transistor Specification

Transistor Code		DMG4800LSD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	8.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	1.17W
Drain-Source Capacitance		798pF

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