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DMG4435SSS MOSFET Transistor

The DMG4435SSS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the DMG4435SSS transistor as follows.

Circuit diagram symbol of the DMG4435SSS transistor

DMG4435SSS Transistor Specification

Transistor Code DMG4435SSS
Transistor Type MOSFET
Control Channel Type P-Channel
Package SO8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 7.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.029Ohm
Power Dissipation (Maximum) PD 1.3W
Drain-Source Capacitance 1614pF
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 35.4nC

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