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DMG2307L MOSFET Transistor

The DMG2307L is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the DMG2307L transistor as follows.

Circuit diagram symbol of the DMG2307L transistor

DMG2307L Transistor Specification

Transistor Code DMG2307L
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT23
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3.1A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.09Ohm
Power Dissipation (Maximum) PD 0.76W
Drain-Source Capacitance 51.3pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7.3nS
Gate-Threshold Voltage (Maximum) 3V

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