DMG1013UW MOSFET Transistor

The DMG1013UW is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the DMG1013UW transistor as follows.

DMG1013UW Transistor Specification

Transistor Code		DMG1013UW
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT323
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	6V
Drain Current (Maximum)	ID	0.82A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.75Ohm
Power Dissipation (Maximum)	PD	0.3W
Drain-Source Capacitance		60pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1V

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