DMG1013T MOSFET Transistor

The DMG1013T is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the DMG1013T transistor as follows.

DMG1013T Transistor Specification

Transistor Code		DMG1013T
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT523
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	6V
Drain Current (Maximum)	ID	0.46A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.7Ohm
Power Dissipation (Maximum)	PD	0.27W
Drain-Source Capacitance		60pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1V

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